Circuit device and method of forming a circuit device having a reduced peak current density

ABSTRACT

In a particular embodiment, a method of forming a field effect transistor (FET) device having a reduced peak current density is disclosed. The method includes forming a field effect transistor (FET) device on a substrate. The FET device includes a drain terminal, a source terminal, a gate terminal, and a body terminal. The method further includes depositing a plurality of metal contacts along a width of a gate terminal of the FET device and forming a wire trace to contact each of the plurality of metal contacts to reduce a gate resistance along the width of the gate terminal.

FIELD OF THE DISCLOSURE

The present disclosure is generally related to a circuit device and method of reducing peak current density.

BACKGROUND

In general, power switches may be used to provide a switched power supply to an inductive load. Inductive loads typically resist a change in current, such that when the power switch is deactivated, the inductive load may operate as a current source to drive current to the switch. If the power switch is a metal oxide semiconductor field effect transistor (MOSFET) device that is driving an inductive load, the MOSFET device may be controlled by a driver circuit coupled to a gate terminal of the MOSFET device. In a particular example, the driver circuit applies a gate voltage of approximately zero volts to a gate contact that is coupled to the gate terminal. However, the inductive load may continue to drive current onto a drain terminal of the MOSFET device.

Generally, during a MOSFET on-state to off-state transition, a displacement current is discharged from the drain terminal of the MOSFET device via a drain-to-gate capacitance and through the driver circuitry. However, a gate resistance of the gate terminal increases with a distance from the driver circuitry. Thus, at a remote end of gate terminal, a gate resistance is greater than at an end closest to the driver circuitry. Assuming a uniform drain-to-gate capacitance, this non-uniform gate resistance will lead to a non-uniform localized gate voltage. Gate terminal regions with higher resistance will sustain a higher voltage potential, forming increased localized charge in the active channel of a MOSFET device. Thus, the non-uniform gate resistance can result in a non-uniform channel current during a switching operation from an on-state to an off-state. In a particular embodiment, the non-uniform channel current can include localized current crowding. In this example, the current from the inductive load may continue to flow through the active portion of the MOSFET device during the on to off-state transition, with localized channel regions handling an increased current density.

In a particular embodiment, a gate contact may be provided at a first end of the gate terminal and the peak channel current density of the MOSFET device may be shifted toward a second end of the gate terminal. In another particular embodiment, two gate contacts may be provided at opposing ends of the gate terminal, and the peak channel current density of the MOSFET device is shifted away from the gate contacts toward a center of the gate terminal. In general, the current at the drain of the MOSFET device is unevenly distributed across a width of the drain, resulting in a peak channel current density at a small portion of the MOSFET device, which may cause overheating and snap-back effects and which may damage the MOSFET device.

SUMMARY

In a particular embodiment, a method of forming a field effect transistor (FET) device having a reduced peak current density is disclosed. The method includes forming a field effect transistor (FET) device on a substrate. The FET device includes a drain terminal, a source terminal, a body terminal, and a gate terminal. The method further includes depositing a plurality of metal contacts along a width of a gate terminal of the FET device and forming a wire trace to contact each of the plurality of metal contacts to reduce a gate resistance along the width of the gate terminal.

In another particular embodiment, a circuit device includes a substrate and a field effect transistor (FET) device deposited on the substrate. The substrate includes an oxide layer having a plurality of thick oxide regions and a plurality of thin oxide regions. The FET device includes a drain terminal, a source terminal, a body terminal, and a gate terminal. The gate terminal includes a first portion that extends over a thick oxide region of the plurality of thick oxide regions and includes a second portion that extends over a thin oxide region of the plurality of thin oxide regions. The circuit device further includes a first plurality of drain contacts coupled to the drain terminal, a second plurality of source contacts coupled to the source terminal, a third plurality of source contacts coupled to the body terminal, and a fourth plurality of gate contacts coupled to the gate terminal along the first portion of the gate terminal.

In yet another embodiment, a circuit device includes a switching driver circuit, an inductive load, and a field effect transistor (FET) device. The FET device includes a drain terminal coupled to the inductive load. The FET device also includes a gate terminal coupled to the switching driver circuit and includes a source terminal. The gate terminal includes a plurality of contacts distributed along a width of the gate terminal to reduce a gate resistance across the width of the gate terminal. The plurality of contacts are adapted to reduce a peak current density of the FET device by distributing current across the width of the FET device when the switching driver circuit switches the FET device to an off state.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a distributed metal oxide semiconductor field effect transistor (MOSFET) device including a gate contact that extends along a width of the gate;

FIG. 2 is a top view of a circuit substrate including a representative high voltage MOSFET device having a gate contact extending along a width of the gate;

FIG. 3 is cross-sectional view of the circuit substrate of FIG. 2 taken along line 3-3 in FIG. 2;

FIG. 4 is a cross-sectional view of the circuit substrate of FIG. 2 taken along line 4-4 in FIG. 2;

FIG. 5 is a diagram of a Power over Ethernet (PoE) system that includes a MOSFET device, such as the MOSFET devices illustrated in FIGS. 1-4;

FIG. 6 is a graph illustrating gate voltages at four locations along a gate terminal of a conventional metal oxide semiconductor field effect transistor (MOSFET) device that is driving an inductive load after the conventional MOSFET device is switched off;

FIG. 7 is a graph illustrating gate voltages at four locations along a gate terminal of a MOSFET device, such as the MOSFET devices illustrated in FIGS. 1-4, that is driving an inductive load after the MOSFET device is switched off;

FIG. 8 is a graph illustrating drain currents at the four locations along the gate terminal of the conventional MOSFET device of FIG. 5 during an on-state to off-state switching transition;

FIG. 9 is a graph illustrating drain currents at the four locations along the gate terminal of the MOSFET device of FIG. 4 after the MOSFET device is switched off; and

FIG. 10 is a flow diagram of a particular embodiment of a method of forming a semiconductor device having a reduced peak current density.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a circuit device 100 including a metal oxide semiconductor field effect transistor (MOSFET) device 102. The MOSFET device 102 includes a drain terminal 104, a gate terminal 106, and a source terminal 108. The drain terminal 104 is coupled to an inductive load 120 that operates like a current source. The gate terminal 106 is coupled to a driver circuit 121, which is adapted to apply a control signal to the gate terminal 106 to control the MOSFET device 102.

In general, the MOSFET device 102 has a device width that can be modeled as a series of MOSFET devices 110 arranged in parallel. The series of MOSFET devices 110 include a first MOSFET device 112, a second MOSFET device 114, a third MOSFET device 116, and a fourth MOSFET device 118. In a particular embodiment, the series of MOSFET devices 110 represent slices of the MOSFET device 102 at various locations along a width of the MOSFET device 102. It should be understood that the series of MOSFET devices 110 may be represented by any number of MOSFET devices arranged in parallel.

The first MOSFET device 112 includes a first drain-to-gate capacitance 132 and a first gate resistance 122. The second MOSFET device 114 includes a second drain-to-gate capacitance 134 and a second gate resistance 124. The third MOSFET device 116 includes a third drain-to-gate capacitance 136 and a third gate resistance 126. The fourth MOSFET device 118 includes a fourth drain-to-gate capacitance 138 and a fourth resistance 128. In a particular example, a drain current (I_(D)) flows from the drain terminal 104 through the series of transistors 110 to the source terminal 108. The drain current (I_(D)) is distributed such that the first MOSFET device 112 carries a first drain current (I_(D1)), the second MOSFET device 114 carries a second drain current (I_(D2)), the third MOSFET device 116 carries a third drain current (I_(D3)), and a fourth MOSFET device 118 carries a fourth drain current (I_(D4)). In a particular embodiment, a sum of the first, second, third, and fourth drain currents (I_(D1), I_(D2), I_(D3), and I_(D4), respectively) is equal to the drain current (I_(D)).

Conventionally, switching a conventional MOSET device from an on-state to an off state caused the drain current (I_(D)) to be distributed unevenly. In particular, the effective gate resistance increased along a width of the gate terminal. Accordingly, during a switch from an on state to an off state, the conventional MOSFET device can operate like a current divider circuit. In a particular embodiment, a portion of the MOSFET device is deactivated while other portions remain at least partially active. The turn off signal causes one portion of the MOSFET device to turn off more quickly than the other portion and the current is crowded to the other portion. In some instances, the drain current at the portion of the conventional MOSFET device that is furthest away from the gate contact can increase to a level that causes damage to the conventional MOSFET device 102.

Returning to FIG. 1, the MOSFET device 102 includes first, second, third, and fourth gate contacts 142, 144, 146, and 148 that operate to bypass the first, second, third, and fourth gate resistors 122, 124, 126, and 128. In a particular embodiment, each of the first, second, third, and fourth gate contacts 142, 144, 146, and 148 have a respective metal resistance that is placed in parallel with the first, second, third, and fourth gate resistances 122, 124, 126, and 128, reducing the effective gate resistance by an order of magnitude. In another particular embodiment, the first, second, third, and fourth gate contacts 142, 144, 146, and 148 operate to short circuit the gates of the first, second, third, and fourth MOSFET devices 112, 114, 116, and 118 to the gate contact 106. The first, second, third, and fourth gate contacts 142, 144, 146, and 148 reduce the effective gate resistances of each of the first, second, third, and fourth MOSFET devices 112, 114, 116, and 118, allowing the drain current (I_(D)) to be distributed substantially evenly across the width of the gate terminal 106, such that the first current (ID1), the second current (ID2), the third current (ID3), and the fourth current (ID4) are substantially equal.

In a particular embodiment, by shorting/reducing the first, second, third, and fourth gate resistances 122, 124, 126, and 128 using the first, second, third, and fourth gate contacts 142, 144, 146, and 148, a peak current density of the circuit device 100 is reduced. Additionally, since the peak current density is reduced, the circuit device 100 may be operated at a higher operating voltage without destroying the MOSFET device 102 when it is switched from an on-state to an off-state.

FIG. 2 is a top view of a circuit device 200 that includes a circuit substrate 201 having a relatively high voltage metal oxide semiconductor field effect transistor (MOSFET) device 202. The MOSFET device 202 includes a drain portion 204, a gate portion 206, a source portion 208, and a body portion 209. The drain portion 204, the gate portion 206, the source portion 208, and the body portion 209 represent heavily doped portions of the circuit substrate 201. The MOSFET device 202 further includes a drain terminal 214, a gate terminal 216, and a source/body terminal 218. The drain, gate, and source/body terminals 214, 216, and 218 extend across substantially an entire width (W) of the MOSFET device 202. The MOSFET device 202 also includes a plurality of drain contacts 224 that are distributed across the drain terminal 214 along substantially the entire width (W) of the MOSFET device 202. The MOSFET device 202 further includes a plurality of gate contacts 226 that are distributed across the gate terminal 216 along substantially the entire width (W) of the MOSFET device 202. Further, the MOSFET device 202 includes a plurality of source contacts 228 that are distributed across the source/body terminal 218 along substantially the entire width (W) of the MOSFET device 202. Further, the MOSFET device 202 includes a plurality of body contacts 229 that are distributed across the source/body terminal 218 along substantially the entire width (W) of the MOSFET device 202.

In a particular embodiment, the drain terminal 214, the gate terminal 216, and the source/body terminal 218 correspond to the drain terminal 104, the gate terminal 106, and the source terminal 108 illustrated in FIG. 1. The plurality of gate contacts 226 represent gate contacts such as the first, second, third, and fourth gate contacts 142, 144, 146, and 148 illustrated in FIG. 1.

In a particular embodiment, the gate terminal 216 is deposited over a silicon oxide layer of the circuit substrate 201. The silicon oxide layer of the circuit substrate 201 has a variable thickness including thin oxide portions and thick oxide portions. The circuit substrate 201 includes a first thin oxide portion 234 of the silicon oxide layer that is associated with the drain portion 204 of the MOSFET device 202. The circuit substrate 201 further includes a second thin oxide portion 236 that is associated with the gate and source portions 206 and 208 of the MOSFET device 202. Additionally, the circuit substrate 201 includes a third thin oxide portion 239 that is associated with the body portion 209 of the MOSFET device 202. The gate terminal 216 extends over the second thin oxide portion 236 and over a relatively thick portion of the silicon oxide layer. In a particular embodiment, the plurality of gate contacts 226 is deposited over the thick portion of the silicon oxide layer. While the plurality of gate contacts 226 are illustrated as discrete gate contacts, it should be understood that the plurality of gate contacts may be a continuous contact that extends across the gate terminal 216 along an entire width (W) of the MOSFET device 202.

FIG. 3 is cross-sectional view 300 of the circuit substrate 201 of FIG. 2 taken along line 3-3 in FIG. 2. The circuit substrate 301 includes a p-bulk layer 350, an n-type well 352, a first oxide layer 354, a polycrystalline silicon or polysilicon layer that serves as the gate terminal 216, and a second oxide layer 356. A plurality of gate contacts 226 extend from a top surface 380 through the second oxide layer 356 to the polysilicon layer (gate terminal 216). In general, each of the plurality of gate contacts 226 is deposited over a relatively thick region of the oxide layer 354. The polysilicon layer (gate terminal 216) extends over a relatively thin portion of the oxide layer 354, which is adjacent to a current channel of the MOSFET device 202.

FIG. 4 is a cross-sectional view 400 of the circuit substrate 201 of FIG. 2 taken along line 4-4 in FIG. 2. The circuit substrate 200 includes a p-bulk material layer 350, an n-well region 352, a first oxide layer 354, and a second oxide layer 356. The circuit substrate 201 includes a MOSFET device 202 having a drain terminal 214, a gate terminal 216, a source/body terminal 218, and a gate-shorting electrode 417. The gate terminal 216 may be formed from a polycrystalline silicon or polysilicon material. The drain terminal 214, source/body terminal 218, and gate shorting electrode 417 may be formed from a metal such as an aluminum or copper alloy. The first oxide layer 354 includes the first thin oxide region 234 adjacent to a heavily doped (N+) region 404 within the n-well region 352. The first oxide layer 354 further includes a second thin oxide region 236 adjacent to a heavily doped (N+) region 408. The first oxide layer 354 further includes a third thin oxide region 239 adjacent to a heavily doped (P+) region 409. The polysilicon gate terminal 216 is deposited on the first oxide layer 354 and extends partially over a thick portion and partially over the second thin oxide region 236. The circuit substrate 201 further includes a drain contact 224 that extends from the drain terminal 214 to the N+ region 404. The circuit substrate 201 also includes a source contact 228 that extends from the source/body terminal 218 to the N+ region 408. The circuit substrate 201 also includes a body contact 229 that extends from the source/body terminal 218 to the P+ region 409. Further, the circuit substrate 201 includes a gate contact 226 that extends from the gate-shorting electrode 417 to the gate terminal 216. The gate terminal 216 includes a first gate portion 410 that is deposited over a thick oxide portion 412 of the oxide layer 354 and includes a second gate portion 414 that extends over at least a portion of the second thin oxide region 236. The second gate portion 414 defines a channel length (L) that is a length of an induced current channel allowing current flow between the drain and the source terminals 218 and 214, respectively. The gate contact 226 is deposited on the first gate portion 410. In a particular embodiment, the MOSFET device 202 is a high voltage MOSFET device.

In general, the gate contact 226 can be deposited at the first gate portion 410 extending over the thick oxide portion 412 of the first oxide layer 354 because a photo-etch process that may be used to open a via from the top surface 380 to the gate terminal 216 does not penetrate through the thick oxide portion 412 to damage the underlying structure. In contrast, if the photo-etch process were performed to etch a via from the top surface 380 to the gate terminal over the second thin oxide region 236, the second thin oxide region 236 may be damaged, resulting in an electrical short circuit between the gate terminal 216 and the substrate 201. Further, other structural or physical damage may also result.

FIG. 5 is a block diagram of an embodiment of a Power over Ethernet (PoE) system 500. The PoE system 500 includes a power sourcing equipment (PSE) device 502 that is coupled to a powered device 504 via an Ethernet cable 512. In a PoE system, the Ethernet cable 512 is used to transport both power and data from the PSE device 502 to the powered device 504. In a particular embodiment, the Ethernet cable 512 includes multiple wire pairs and may carry power via a first wire pair or a second wire pair of the multiple wire pairs. In a particular embodiment, the powered device 504 includes one or more diode bridges to rectify a power supply from either the first or second wire pair.

The PSE 502 includes a transformer 514 that is coupled to wires 518 and 520 and to the Ethernet cable 512. The wires 518 and 520 are selectively coupled to a power source 516 via a power switch 517. The switch 517 may be a field effect transistor (FET) device, such as the MOSFET devices illustrated in FIGS. 1-4.

The powered device 504 includes an interface 525, such as an Ethernet connector (i.e., an RJ-45 Ethernet connector), that couples the Ethernet cable 512 to a transformer 522. The transformer 522 is coupled to the diode bridge 506 via first and second input terminals 524 and 526. The diode bridge 506 receives a signal via the first and second input terminals 524 and 526 and rectifies the signal to provide a positive power supply (Vpos) to a first terminal 528 and to provide a negative power supply (Vneg) to a second terminal 530. The powered device 504 also includes Power over Ethernet (PoE) controller, hot swap, and switching regulator circuitry 532 that is coupled to the first and second terminals 528 and 530 to receive a power supply and to provide a regulated power supply to a first supply terminal 534 and to a second supply terminal 536, which are coupled to an output load 538. In a particular embodiment, the PoE controller, hot swap, and switching regulator circuitry 532 includes a field effect transistor (FET) device, such as the MOSFET devices illustrated in FIGS. 1-4. In a particular embodiment, the output load 538 may include one or more circuits.

In a particular embodiment, the PoE controller, hot swap, and switching regulator circuitry 532 includes a logic circuit that is adapted to switch the controller, hot swap, and switching regulator circuitry 532 to an off state. The controller, hot swap, and switching regulator circuitry 532 includes a metal oxide semiconductor field effect transistor (MOSFET) device having a gate terminal coupled to a wire trace via a plurality of contacts that are deposited along a width of the gate terminal. In a particular embodiment, the plurality of contacts are disposed along substantially an entire width of the gate terminal, reducing a peak current density by reducing/shorting a gate resistance associated with the MOSFET device to distribute a discharge current across the entire width of the MOSFET device when the MOSFET device switches from an on state to an off state.

FIG. 6 is a graph 600 illustrating gate voltages at four locations along a gate terminal of a conventional metal oxide semiconductor field effect transistor (MOSFET) device that is driving an inductive load after the conventional MOSFET device is switched off. The graph 600 includes a first gate voltage 602 that is associated with a first portion of a gate terminal of a conventional MOSFET device that is closest to a driver circuit (i.e., that is closest to a gate contact). The first gate voltage 602 decreases from a first level 622 to a second level 624 rapidly. The graph 600 further includes a second gate voltage 604 that decreases exponentially from the first level 622 to the second level 624. The graph 600 also includes a third gate voltage 606 that decreases from the first level 622 and a fourth gate 608 that decreases only slightly from the first level 622. In a particular embodiment, since the gate voltages 606 and 608 do not discharge, the gate terminal of the conventional MOSFET device holds a portion of the MOSFET device in an active state (i.e., an on or conducting state). Thus, the conventional MOSFET device may continue to conduct current even when the conventional MOSFET device is switched off.

FIG. 7 is a graph 700 illustrating gate voltages at four locations along a gate terminal of a MOSFET device, such as the MOSFET devices illustrated in FIGS. 1-4, that is driving an inductive load after the MOSFET device is switched off. The graph 700 includes a first gate voltage 702 that is associated with a first portion of a gate terminal of the MOSFET device. The graph 700 also includes a second gate voltage 704 that is associated with a second portion of the gate terminal. The graph 700 further includes a third gate voltage 706 that is associated with a third portion of the gate terminal. The graph 700 also includes a fourth gate voltage 708 that is associated with a fourth portion of the gate terminal. In a particular embodiment, the first, second, third, and fourth gate voltages 702, 704, 706 and 708 are substantially equal and the voltage levels decrease substantially linearly from a first voltage level 722 to a second voltage level 724.

In a particular embodiment, the plurality of gate contacts distributed across a width of the gate terminal of the MOSFET device, as described with respect to FIGS. 1-4, allow for distribution of voltage and current across the gate terminal when the MOSFET device is switched off. In a particular embodiment, the distribution of gate contacts reduces an effective gate resistance across a width of a gate terminal of the MOSFET device, allowing current to be divided substantially evenly across a width of the MOSFET device. In a particular example, the distribution of gate contacts reduces a peak current density in the MOSFET device by equalizing the gate voltage and distributing the current across the width of the MOSFET device. In a particular embodiment, reducing the peak current density across the MOSFET device may prevent undesired damage to the MOSFET device and may extend the operating life of the MOSFET device.

FIG. 8 is a graph 800 illustrating drain currents at the four locations along a width of the conventional MOSFET device of FIG. 6 during an on-state to off-state switching transition. The graph 800 includes a first drain current (I_(D1)) 812 associated with a first portion of the conventional MOSFET device that is closest to a driver circuit. The graph 800 also includes a second drain current (I_(D2)) 814, a third drain current (I_(D3)) 816, and a fourth drain current (I_(D4)) 818. When the MOSFET device is in an on-state, the first, second, third, and fourth drain currents 812, 814, 816, and 818 are equal to one quarter of the overall drain current (i.e., I_(D)/4). When the MOSFET device transitions from the on-state to an off-state, the first drain current (I_(D1)) 812 turns off relatively quickly. However, since the inductive load continues to drive current into the drain of the MOSFET device, the drain current is distributed along the width of the MOSFET device away from the driver circuit. Thus, the second drain current (I_(D2)) 814 initially rises and then turns off. The drain current (I_(D)) is crowded toward the third and fourth locations, such that the third drain current (I_(D3)) 816 and the fourth drain current (I_(D4)) 818 increase. The fourth drain current (I_(D4)) 818 continues to increase as the third drain current (I_(D3)) 816 turns off. Finally, the fourth drain current (I_(D4)) 818 turns off. The graph 800 illustrates that the drain current is crowded toward a current channel of the MOSFET device that is furthest away from the gate contact.

In a particular embodiment, the drain current is shifted or crowded away from the driver circuit (i.e., away from the gate contact) along the gate terminal until a large portion of the drain current flows through a current channel associated with a relatively small portion of the conventional MOSFET device. While the conventional MOSFET device is switched off, the conventional MOSFET device may continue to conduct current. In this condition, the high current through a small area of the conventional MOSFET device can damage the device. Further, as the drain voltage rises and the drain current increases at a portion of the conventional MOSFET device, the current flow through the current channel can increase, which may destroy at least a portion of the conventional MOSFET device. In a particular embodiment, the current may increase due to impact ionization, snapback effects, other electrical phenomena, or any combination thereof. In a particular embodiment, the term impact ionization refers to an electrical phenomenon in which the increasing drain current coupled with the drain voltage induces creation of additional charge carriers, which can create current that flows into the oxide layer and which can be trapped in the oxide layer, adversely impacting the transistor operation. In a particular instance, the impact ionization can result in an avalanche breakdown that results in an undesired current gain at the current channel. In a particular instance, the impact ionization can result in an increase in body or substrate current which may contribute to the turn-on of the parasitic bipolar junction transistor (BJT) formed by the MOSFET source, body and drain regions. This BJT turn-on may lead to snapback, where the MOSFET drain voltage collapses while the drain terminal current increases.

FIG. 9 is a graph 800 illustrating drain currents at the four locations along the gate terminal of the MOSFET device of FIG. 6 during a transition from an on-state to an off-state. The graph 900 includes first, second, third, and fourth drain currents, generally designated at 912, 914, 916, and 918, respectively. When the MOSFET device is in an on-state, the first, second, third, and fourth drain currents 912, 914, 916, and 918 are approximately equal to one quarter of the drain current (i.e., I_(D)/4), generally indicated at 922. When the MOSFET device transitions from an on-state to an off-state, the current level of the first drain current 912 transitions quickly, and each of the second, third, and fourth drain currents 914, 916, and 918 also transition from the first level 922 to a second level 924 with reduced peak current density. Since the drain current at the four locations along the gate terminal of the MOSFET device have a substantially equal current, the transistor does not experience current crowding within the current channel, and the overall peak current density is reduced. Further, a peak charge density of the MOSFET device is decreased, which allows the MOSFET device to operate at a higher operating voltage.

FIG. 10 is a flow diagram of a particular embodiment of a method of forming a semiconductor device having a reduced peak current density. At 1002, a field effect transistor (FET) device is formed on a substrate, where the FET device includes a drain terminal, a source terminal, and a gate terminal. Advancing to 1004, a plurality of metal contacts is deposited along substantially an entire width of a gate terminal of the FET device. In a particular embodiment, the plurality of metal contacts is a metal strip along a width of the gate terminal. Continuing to 1006, a wire trace is formed to contact each of the plurality of metal contacts to reduce a gate resistance along the entire width of the gate terminal. In a particular embodiment, the wire trace includes a metal resistance in parallel with a gate resistance of the gate terminal. In another particular embodiment, the wire trace substantially shorts a gate resistance of the gate terminal along the entire width of the gate terminal. The method terminates at 1008.

In a particular embodiment, the gate terminal includes a polysilicon deposit that has a first portion that extends over a thick oxide layer and has a second portion that extends over a relatively thin oxide layer. The metal contacts are deposited along the width of the polysilicon deposit over the first portion.

Although the present specification describes components and functions that may be implemented in particular embodiments with reference to particular standards and protocols, the disclosed embodiments are not limited to such standards and protocols. For example, standards for Power over Ethernet and other power and data transmission techniques (such as broadband Internet over power lines) represent examples of the state of the art. Such standards are periodically superseded by updated equivalents having essentially the same functions. For example, the PoE standard may be superseded by a PoE plus standard that, among other modifications, allows for transmission of higher voltages to powered devices that support such voltages. Accordingly, replacement standards and protocols having the same or similar functions as those disclosed herein are considered equivalents thereof.

The illustrations of the embodiments described herein are intended to provide a general understanding of the structure of the various embodiments. The illustrations are not intended to serve as a complete description of all of the elements and features of apparatus and systems that utilize the structures or methods described herein. Many other embodiments may be apparent to those of skill in the art upon reviewing the disclosure. Other embodiments may be utilized and derived from the disclosure, such that structural and logical substitutions and changes may be made without departing from the scope of the disclosure. Additionally, the illustrations are merely representational and may not be drawn to scale. Certain proportions within the illustrations may be exaggerated, while other proportions may be reduced. Accordingly, the disclosure and the figures are to be regarded as illustrative rather than restrictive.

The above-disclosed subject matter is to be considered illustrative, and not restrictive, and the appended claims are intended to cover all such modifications, enhancements, and other embodiments, which fall within the true spirit and scope of the present invention. Thus, to the maximum extent allowed by law, the scope of the present invention is to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing detailed description. 

1. A method of forming a field effect transistor (FET) device having a reduced peak current density, the method comprising: forming a field effect transistor (FET) device on a substrate, the FET device including a drain terminal, a source terminal, a body terminal, and a gate terminal; depositing a plurality of metal contacts along a width of a gate terminal of the FET device; and forming a wire trace to contact each of the plurality of metal contacts to reduce a gate resistance along the width of the gate terminal.
 2. The method of claim 1, wherein the wire trace includes a resistance in parallel with a gate resistance of the gate terminal.
 3. The method of claim 1, wherein the wire trace substantially shorts a gate resistance of the gate terminal along substantially an entire width of the gate terminal.
 4. The method of claim 1, wherein the substrate comprises an oxide layer having a plurality of thick oxide regions and having a plurality of thin oxide regions, and wherein the gate terminal comprises a polysilicon deposit that includes a first portion extending over a thick oxide region of the plurality of thick oxide regions and having a second portion extending over a thin oxide region of the plurality of thin oxide regions.
 5. The method of claim 4, wherein the plurality of metal contacts is deposited along the width of the polysilicon layer over the first portion.
 6. The method of claim 1, wherein depositing the plurality of metal contacts comprises depositing a metal strip along a width of the gate terminal.
 7. A circuit device having a reduced peak current density, the circuit device comprising: a substrate including an oxide layer having a plurality of thick oxide regions and having a plurality of thin oxide regions; a field effect transistor (FET) device deposited on the substrate, the FET device including a drain terminal, a source terminal, a body terminal, and a gate terminal, the gate terminal including a first portion that extends over a thick oxide region of the plurality of thick oxide regions and including a second portion that extends over a thin oxide region of the plurality of thin oxide regions; a first plurality of drain contacts coupled to the drain terminal; a second plurality of source contacts coupled to the source terminal; a third plurality of source contacts coupled to the body terminal a fourth plurality of gate contacts coupled to the gate terminal along the first portion of the gate terminal.
 8. The circuit device of claim 7, further comprising a first wire trace coupled to the first plurality of drain contacts and coupled to a current source.
 9. The circuit device of claim 8, further comprising a second wire trace coupled to the second plurality of source contacts.
 10. The circuit device of claim 9, further comprising a third wire trace coupled to the fourth plurality of gate contacts to provide a metal resistance in parallel with a gate resistance along the width of the gate terminal.
 11. The circuit device of claim 7, wherein the gate terminal comprises a polysilicon gate terminal.
 12. The circuit device of claim 7, wherein the fourth plurality of gate contacts comprises a substantially continuous stripe across the width of the gate terminal.
 13. The circuit device of claim 7, wherein, when the FET device is switched off, the fourth plurality of gate contacts reduce a gate resistance of the gate terminal to distribute a current density across the FET device.
 14. The circuit device of claim 7, wherein, when the FET device is switched off, the fourth plurality of gate contacts cause a substantially even distribution of current from the inductive load across the FET device.
 15. The circuit device of claim 7, wherein the FET device comprises a power switch to drive an inductive load of an electronic device.
 16. A circuit device comprising: a switching driver circuit; an inductive load; and a field effect transistor (FET) device including a drain terminal coupled to the inductive load and including a gate terminal coupled to the switching driver circuit, the FET device further including a source terminal and a body terminal, the gate terminal including a plurality of contacts distributed along a width of the gate terminal to reduce a gate resistance across the width of the gate terminal; wherein the plurality of contacts are adapted to reduce a peak current density of the FET device by distributing current across the width of the FET device when the switching driver circuit switches the FET device to an off state.
 17. The circuit device of claim 16, wherein the FET device comprises a switching regulator of a power sourcing equipment device associated with a Power over Ethernet network.
 18. The circuit device of claim 16, wherein the FET device comprises a switching regulator circuit of a powered device that is adapted to communicate with a Power over Ethernet network.
 19. The circuit device of claim 16, wherein the circuit device comprises a circuit substrate that includes the FET device, the circuit device including a plurality of heavily doped regions and an oxide layer having a varying thickness that extends over the plurality of heavily doped regions, the oxide layer including a plurality of thick oxide regions and a plurality of thin oxide regions.
 20. The circuit device of claim 19, wherein the gate terminal includes a first portion extending over a thick oxide region along a width of the FET device and a second portion extending over a thin oxide region along the width of the FET device.
 21. The circuit device of claim 20, wherein the plurality of gate contacts are deposited on the first portion of the gate terminal across a width of the FET device.
 22. The circuit device of claim 21, further comprising a wire trace coupled to the plurality of gate contacts to reduce a gate resistance across the width of the FET device. 